Abstract
(Bi0.9Dy0.1)(Fe0.9Mn0.1)O3 (BDFM) and pure BiFeO3 (BFO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The films were annealed at 550 C by using a conventional annealing process under a nitrogen atmosphere. The remnant polarization (2Pr) and the coercive electric field (2Ec) of the BDFM thin film capacitor were 90 µC/cm 2 and 529 kV/cm at an applied electric field of 663 kV/cm, respectively. However, the BFO thin film capacitor showed a leaky hysteresis loop. The values of the leakage current density of the BDFM and the BFO thin film capacitors were 4.55 ◊ 10 5 and 5.44 ◊ 10 3 A/cm 2 at 100 kV/cm, respectively. The reduced leakage current and the improved ferroelectric property are discussed based on an investigation of the electronic structure and the microstructure.
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