Abstract
The 12% Cerium (Ce) and 10% Manganese (Mn) were doped at A and B sites respectively in BiFeO3 (BFO) thin films along with incorporation of 5% excess Bi. Pure and undoped BFO thin film capacitors are fabricated on indium tin oxide (ITO) coated corning glass and silicon substrate by chemical solution deposition (CSD) method. Film becomes preferred oriented along (110) directions with introduction of Mn and Ce in the host BFO lattice. Leakage current density is reduced by about 4 orders from (4.59 × 10−3 A/cm2) to about 2.91 × 10−7 A/cm2 at 100 KV/cm field after 12% Ce doping in BFO (BCFO) thin film. Enhanced ferroelectric response with saturated P-E loop is observed for BCFO thin film in compare to that obtained for 10% Mn doped BFO (BFMO) thin film. Improved capacitance-voltage characteristics with good butterfly loop is obtained for Bi0.88Ce0.12FeO3 thin film, indicating an increased degree of ferroelectricity. However, enhanced M-H loop with well saturation magnetization (Ms ∼ 19.65 emu/g) is observed for BFMO thin films while wasp waist loops (pinched) are observed for BCFO thin films with slightly degraded ferromagnetic properties.
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