Abstract
AbstractA relationship between the diffraction efficiency of a photothermoplastic device and the electrophotographic sensitivity of the photoconductor therein has been derived.Heat development times down to 6.5 (as have been observed with conventional photothermoplastic devices. However, development times of 100 iMS are recommended for prolonged cycling, since shorter development times are associated with deterioration of the thermoplastic owing to the high development temperatures required.A new photothermoplastic device has been developed in which the illumination and development steps have been combined by using the heating effect resulting from the illumination of a low resistance CdS layer. Development times of 75 JJ.S and photosensitivities of 150 fxJ cm-2 have been observed with such devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
