Abstract
Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge-content x, doping density N, carrier temperature TC and lattice temperature TL. 2) Modeling of the relaxation times τ(x, TC, TL) by splines.
Highlights
Among all SiGe device concepts, SiGe Heterojunction Bipolar Transistors (HBTs) currently have the highest potential for commercial applications
Though even some of the commercially available simulators offer the capability of simulating heterojunction devices, reliable transport parameters for these devices are not available for most design tasks
The underlying reason for this dilemma is that the Ge content x is variable in SiGe devices, which has added an additional dimension to the problem of determining transport parameters
Summary
Among all SiGe device concepts, SiGe Heterojunction Bipolar Transistors (HBTs) currently have the highest potential for commercial applications. In order to support the design of SiGe. HBTs, accurate and efficient device simulation tools are necessary. Though even some of the commercially available simulators offer the capability of simulating heterojunction devices, reliable transport parameters for these devices are not available for most design tasks. The underlying reason for this dilemma is that the Ge content x is variable in SiGe devices, which has added an additional dimension to the problem of determining transport parameters. The traditional approach of extracting transport parameters predominantly from experimental data, which worked. Well for silicon for a long time, is no longer feasible for SiGe devices because reliable experimental data, especially for strained SiGe, are hardly available
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