Abstract
The conduction mechanism of oxide-nitride-oxide film formed on the rough polycrystalline silicon surface, which has non-uniform grain sizes, is studied. At the positive bias, Poole-Frenkel (PF) conduction of holes dominates in the total leakage current. At the negative bias, although the PF conduction of holes is dominant in the nitride, Fowler-Nordheim tunneling conduction of electrons also occurs at a higher electric field. This phenomenon is discussed with a model assuming an electric field concentration at the convex edge of the plate electrode, which is formed between neighboring grains.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
