Conductance and capacitance–frequency characteristics of polypyrrole/p‐type silicon structures

Abstract

AbstractWe formed a polypyrrole/p‐type silicon device by an anodization process. An aluminum electrode was used as an ohmic contact. From the current–voltage characteristics of the device, barrier height and ideality factor values of 0.662 eV and 1.734, respectively, were obtained from a forward‐bias current–voltage plot. Low capacitance–frequency and conductance–frequency measurements from 0.00 to 0.30 V with steps of 0.02 V were made. At each frequency, the measured capacitance decreased with increasing frequency because of a continuous distribution of the interface states in the frequency range of 5.0 Hz to 2.0 MHz. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1334–1338, 2003