Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

Abstract

A Mo/n-type 6H-SiC/Ni Schottky barrier diode (SBD) was fabricated by sputtering Mo metal on n-type 6H-SiC semiconductor. Before the formation of Mo/n-type 6H-SiC SBD, an ohmic contact was formed by thermal evaporation of Ni on n-type 6H-SiC and annealing at 950°C for 10min. It was seen that the structure had excellent rectification. The electrical parameters were extracted using its current–voltage (I–V) and capacitance–voltage (C–V) measurements carried out at room temperature. Very high (1.10eV) barrier height and 1.635 ideality factor values were reported for Mo/n-type 6H-SiC using lnI–V plot. The barrier height and series resistance values of the diode were also calculated as 1.413eV and 69Ω from Norde׳s functions, respectively. Furthermore, 1.938eV barrier height value of Mo/n-type 6H-SiC SBD calculated from C–V measurements was larger than the one obtained from I–V data.