Electrical characteristics and inhomogeneous barrier analysis of Au–Be/p-InSe:Cd Schottky barrier diodes

Abstract

We have identically prepared Au–Be/p-InSe:Cd Schottky barrier diodes (SBDs) (21 dots) on the InSe:Cd substrate. The electrical analysis of Au–Be/p-InSe:Cd structure has been investigated by means of current–voltage ( I– V), capacitance–voltage ( C– V) and capacitance–frequency ( C– f) measurements at 296 K temperature in dark conditions. The effective barrier heights and ideality factors of identically fabricated Au–Be/p-InSe:Cd SBDs have been calculated from their experimental forward bias current–voltage ( I– V) characteristics by applying a thermionic emission theory. The BH values obtained from the I– V characteristics have varied between 0.74 eV and 0.82 eV with values of ideality factors ranging between 1.49 and 1.11 for the Au–Be/p-InSe:Cd SBDs. It has been determined a lateral homogeneous barrier height value of approximately 0.82 eV for these structures from the experimental linear relationship between barrier heights and ideality factors. The Schottky barrier height (SBH) value has been obtained from the reverse-bias C– V characteristics of Au–Be/p-InSe:Cd SBD for only one diode. At high currents in the forward direction, the series resistance effect has been observed. The value of series resistance has been determined from I– V measurements using Cheung’s and Norde’s methods.