Abstract
Antimony surface segregation during Si(001) molecular beam epitaxy (MBE) was investigated at temperatures T s = 515−800 ° C using concentration transient analysis (CTA). The dopant surface coverage θ, bulk fraction γ, and incorporation probability σ during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T s changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to θ. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T s with θ Sb values up to 0.9 monolayers (ML): in films doped with Sb + ions accelerated by 100 V, θ Sb was less than or equal to 4 × 10 −3 ML. Surface segregation of coevaporated antimony was kinetically limited for the film growth conditions in these experiments.
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