Suppression of Ge surface segregation during Si molecular beam epitaxy by atomic and molecular hydrogen irradiation

Abstract

To study hydrogen irradiation effects on Ge surface segregation during Si molecular beam epitaxy, we introduced molecular and atomic hydrogen into a molecular beam epitaxial growth chamber, and found that surface segregation is strongly suppressed by atomic hydrogen irradiation, and that molecular hydrogen irradiation slightly suppresses surface segregation. Molecular hydrogen might dissociate into atomic hydrogen at the substrate surface and have the same effect as atomic hydrogen. We think that segregation is suppressed because hydrogen irradiation limits the surface migration of Si and Ge atoms.