Abstract
Ge surface segregation is a phenomenon in which Ge segregates to the epitaxial surface during MBE growth, and atomic hydrogen irradiation during MBE growth can reduce this phenomenon. To reveal the mechanism of both the phenomenon and the hydrogen irradiation effect, we have investigated the dependence of the phenomenon, with and without atomic hydrogen irradiation, on the Si growth rate, the substrate orientation, and the substrate temperature. The segregated Ge concentration does not depend exponentially on the Si growth thickness and a second-order reaction as well as a first-order reaction is necessary to describe the Ge segregation phenomenon in Si. The segregation length on Si(1 0 0) is larger than that on Si(1 1 1). This difference in segregation lengths appears to be due to a difference in the number of segregation paths in different substrates. Atomic hydrogen irradiation does not change the potential of the two-energy-state model, but it does change the probability of the second-order reaction occurring. As a result, the segregation is reduced.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
