Abstract
The growth mechanism of GaAs in molecular beam epitaxy has been investigated with atomic hydrogen irradiated during epitaxial growth. The GaAs growth rate was decreased by atomic hydrogen irradiation. The growth rate reduction has been observed when the Ga flux was on and negligible GaAs desorption was observed when the Ga flux was off, and therefore re-evaporation of Ga adatoms, which are migrating on the surface occurs. The re-evaporation rate of GaAs, which is assumed to be proportional to the Ga adatom density increases linearly with the square root of the Ga flux and decreases with substrate temperature. These results and the rate equation for the Ga adatom density indicate that stable nuclei are formed after collision of two Ga adatoms. The reduction of the re-evaporation rate with substrate temperature is observed in the temperature range from 400 to 500 °C, which is due to an increase in the surface diffusion constant and consequently an increase in the nucleation rate of stable nuclei.
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