Abstract
Bis-cyclopentadienyl magnesium (Cp2Mg) is used as a p-type dopant in Indium Phosphide (InP) which is grown by metalorganic vapor phase epitaxy (MOVPE). The holes carriers concentration and magnesium (Mg) incorporation efficiency are studied using Hall effect measurements, high-resolution X-ray diffraction (HR-XRD), Secondary ion mass (SIMS), Nikon interference contrast Normarski microscope and photoluminescence (PL) spectroscopy-type InP layers with holes concentration up to 2.3 × 1018 cm−3 are obtained. From PL measurements, the doped samples have a near emission band to band (B–B) transition, an Mg-related emission band–acceptor (B–A) and a donor–acceptor (D–A) transition. We demonstrated that an increase of the Mg flow was effective to control the intrinsic n-type doping coming from carbon impurities of the precursors but at the cost of crystallinity degradation originating from too high Mg atoms concentration in the InP lattice.
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