Comparison of Ar+ Monoatomic and Cluster Ion Sputtering of Ta2O5 at Different Ion Energies, by XPS: Part 2 - Cluster Ions

Abstract

A standard 30 nm thick Ta2O5 oxide layer grown on Ta was examined by XPS after Arn+ cluster ion bombardment at ion energies of 4 keV, 5 keV and 6 keV, with a cluster size of 1000 atoms. The reduction of Ta2O5, resulting from the preferential sputtering of oxygen after ion beam bombardment at different energies has been investigated. Survey spectra, C 1s, Ta 4f and O 1s spectra are presented for each profile at three stages: native surface, after reaching the steady-state oxide composition, and from the underlying metal substrate. It is necessary to reach a voltage of 6 keV to obtain a good sputter rate. The use of the cluster source seems to be promising to reduce the preferential sputtering phenomenon.