Comparison of Ar+ Monoatomic and Cluster Ion Sputtering of Ta2O5 at Different Ion Energies, by XPS: Part 1 - Monoatomic Ions

Abstract

A standard 30 nm thick Ta2O5 oxide layer grown on Ta was examined by XPS after Ar+ ion bombardment at ion energies of 200 eV, 500 eV, and 3 keV. The reduction of Ta2O5, resulting from the preferential sputtering of oxygen after ion beam bombardment at different energies has been investigated. Survey spectra, C 1s, Ta 4f and O 1s spectra are presented for each profile at three stages: native surface, after reaching the steady-state oxide composition, and from the underlying metal substrate. Reducing the Ar+ energy from 3 keV to 200 eV makes no substantial difference in the degree of Ta2O5 reduction observed following ion bombardment.