Abstract
The electrothermal simulation of high voltageLIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an importan parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with SiO 2 and Al 2 O 3 at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with Al 2 O 3 insulator had good thermal conductivity and reliability.
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