Communication—Diffusion Break-Assisted Programming Mode for Active Electrically Programmable Fuse

Abstract

The fabrication of an active electrically programmable fuse (eFuse) on a silicon-on-insulator (SOI) substrate fully compatible with the current complementary metal–oxide–semiconductor technology is reported. The SOI structure inherently provides an isolation environment for an active eFuse. N- and P-type active fuses are programmed at room temperature and at 125°C. After programming, the P-type active fuse shows better programming performance than the N-type at both temperatures. The remaining cobalt in the fuse link decreases the programming performance of the N-type active fuse. The formation of diffusion break after programming assists the performance of the P-type active fuse.