Abstract
This work shows that the channel hot carrier (CHC) degradation for a p-MOSFET consists of two different regimes. At low V/sub g/, the degradation is dominated by hot electrons produced by impact ionization. The hot electrons are responsible for the creation of both interface traps and electron traps within the oxide. At high V/sub g/, a NBT-induced hot carrier effect is evidenced as well as an anomalous CHC effect. This work should help understanding the CHC degradation of pMOSFET as well as determining the worst case degradation.
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