Investigation on Channel Hot Carrier degradation of ultra deep submicron SOI pMOSFETs

Abstract

The bias dependence of Channel Hot Carrier (CHC) degradation in 0.18μm SOI pMOSFETs is investigated in this paper. Two classical bias modes (V g @I submax and V g =V d ) were applied to analyze the CHC degradation behavior of SOI pMOSFETs. The results show that at low V g , hot carriers injection produced by impact ionization is the main factor contributed to degradation. However, the degradation stressed at high V g is controlled by both CHC and NBTI effect, showing the NBTI-like behavior at room temperature which indicates that NBTI effect is the dominant factor. A possible mechanism is put forward to explain the enhanced CHC degradation under V g =V d compared with pure NBTI degradation. The influence of floating body on the performance degradation of PDSOI devices is also investigated.