Separation of NBTI component from channel hot carrier degradation in pMOSFETs focusing on recovery phenomenon

Abstract

Channel hot-carrier (CHC) degradation becomes more critical as the channel length is reduced. In general, CHC degradation is evaluated using DC stress applying both gate and drain bias. However, in the case of p-channel MOSFETs, negative bias temperature instabilities (NBTI) also degrades threshold voltage (V TH ) and saturation drain current (I sat ) under DC stress applying gate bias. Therefore, CHC degradation might include the NBTI component, which would lead to over-estimate the CHC degradation. Therefore, a separation of the BTI component from CHC degradation is necessary to predict device lifetime more accurately. In this study, a simple separation method of NBTI and CHC component from CHC test data is proposed, focusing on the recovery phenomenon, which is a distinctive behavior of NBTI.