Abstract
Channel hot-carrier (CHC) degradation in p-channel MOSFETs essentially includes negative bias temperature instabilities (NBTI), which would lead to over-estimate the CHC degradation. Therefore, a separation of the BTI component from CHC degradation is necessary to predict device lifetime more accurately. In this study, a simple lifetime prediction method separating NBTI and CHC component from sequential CHC test (i.e. alternate stress and relax) data is proposed, focusing on the recovery phenomenon, which is a distinctive behavior of NBTI.
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