Collector–Base Junction Capacitance of Advanced Bipolar Transistors Operating at Avalanche Breakdown

Abstract

Modeling of the collector–base junction capacitance of the advanced bipolar transistors operating at avalanche breakdown is developed. The comprehensive junction capacitance model accounts for high current and high field effects at the collector–base junction. The impact ionization generates tremendous amount of free carriers in the collector–base space-charge region which increases the collector–base junction capacitance at the avalanche breakdown regime. The present collector–base junction capacitance is useful for device and circuit design under avalanche breakdown prior to the actual fabrication of the circuit.