Abstract
AbstractWe have investigated the growth of the GaN‐rich side of GaNP films by metalorganic chemical vapor deposition (MOCVD). The GaNP samples were mainly analysed by using X‐ray diffraction (XRD) and Auger electron spectroscopy (AES). From the XRD measurement, we have found that the c‐axial lattice constant and the a‐axial lattice constant of our GaNP were smaller than those of GaN. Moreover, we have confirmed that these lattice constants decreased with increasing PH3 flow rate. According to the AES analysis, the nitrogen concentration in GaNP hardly changed along with increasing the PH3 flow rate, but the gallium concentration tended to decrease. This fact implies that a phosphorus atom would be replaced with not a nitrogen atom but a gallium atom on III‐group site. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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