Abstract
Al0.15Ga0.85As/Si grown by metalorganic chemical vapor deposition (MOCVD) was subjected to rapid thermal annealing (RTA) and investigated by photoluminescence (PL), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and double crystal X-ray diffraction (XRD) measurements. After RTA at 850°C for 10 s the PL intensity increased significantly. Above 900°C, quenching of PL intensity was observed. An emission at 1.515 eV was observed only in 900 and 950°C annealed samples and is attributed to the formation of a Si-related complex defect. AES and SIMS measurements revealed the diffusion of Si at higher annealing temperatures from the top surface into the epilayer and this diffusion is accounted for by a gas phase reaction. Double-crystal XRD showed a decreasing full width at half maximum (FWHM) value as the annealing temperature was increased.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
