Abstract
Thin films of copper-tungsten (Cu-W) deposited on silicon wafers by magnetron sputtering were characterized by Atomic Force Microscopy (AFM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) and four-point probe method were employed to characterize the microstructure and properties of Cu-W films. Power spectra density (PSD) was used to calculate the fractal dimension of AFM images. The results show that the fractal dimension values increase with the film thickness. A positive correlation between fractal dimension and resistivity of the film was also demonstrated for amorphous films. Changes in the relationship between the resistivity and the fractal dimension are observed for films with possible crystalline structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
