Abstract
The object of this series of papers is to review the various possibilities offered by ion beam techniques for the characterization of silicon material and devices. The following techniques are successively considered: • -Secondary Ion Mass Spectrometry (SIMS) • -Rutherford Backscattering Spectrometry (RBS) • -Low Energy Ion Scattering Spectrometry (ISS) • -Charged particle Activation Analysis • -Heavy Ion X-ray Emission (HEHIXE) In order to allow comparisons, three other methods for bulk characterization have been briefly considered: • -Spark Source Mass Spectrometry (SSMS) • -Neutron Activation Analysis • -Atomic Emission Spectrometry from Inductively Coupled Plasma.
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