Abstract
Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied to Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array in the (−40 ÷ ＋30) °C temperature range. The protocol foresees to measure several parameters: breakdown voltage, quenching resistance, gain, dark count rate and probability of cross-talk. Methods to extract them and their dependence on temperature at fixed overvoltage are shown and the results are discussed.
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