Abstract
We have investigated the effects of X-ray irradiation to doses of 0, 200Gy, 20kGy, 2MGy, and 20MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current–voltage, capacitance/conductance–voltage, capacitance/conductance–frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.
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