Abstract
Ge-doped silica films have been deposited on Si substrates from SiCl 4, GeCl 4, and H 2/O 2 by flame hydrolysis deposition (FHD), and annealed to 1150 °C for 2 h. X-ray photoelectron spectroscopy (XPS) showed that the positions of the peaks correspond to the Si, O, Ge, and C levels for Ge-doped SiO 2 film. Furthermore, the optical properties of the samples using Variable Angle Spectroscopic Ellipsometry (VASE) illustrate that the refractive index of the samples increase with the increasing GeCl 4 flow ratio which indicates that the amount of germanium incorporated into the films increase. We also contrast the refractive indices of samples annealed to different temperatures. When the GeO 2 content to SiO 2 is equal to 16.28% (the atom ratio of Ge and Si is 10:90), the optical loss of the film is less than 0.527 dB/cm at 1550 nm.
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