Abstract
xGeO 2 -(1-x)SiO 2 films (0.1 ≤ x < 0.4) were deposited by flame hydrolysis deposition (FHD) on Si substrates, and annealed to 1150 °C for 2 h for consolidation in air. Then the films were irradiated perpendicularly to KrF excimer laser after being hydrogen loaded to enhance the photosensitivity to UV light. X-ray photoelectron spectroscopy (XPS) was used in order to characterize the purity of the films. The film was also studied using atomic force microscopy (AFM) to determine the analytical details of the microstructure. Film thickness and refractive index were measured by variable angle spectroscopic ellipsometry (VASE). The maximum positive 0.339% and negative 0.235% refractive index changes ar 1550 nm were obtained after irradiation.
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