Abstract
We report the electrical properties of a GaAs dynamic random access memory (DRAM) cell in which the storage capacitor is a modulation-doped heterojunction and the access transistor is a modulation-doped field-effect transistor. Experimental waveforms illustrating both reading and writing are exhibited. Isolated storage capacitors have 1/e storage times as long as 4.3 h at room temperature. The complete DRAM cell exhibits a room temperature storage time of about 3 min, limited by gate leakage in the access transistor.
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