Abstract
Photolithography is one of the critical processes in IC manufacturing. Modeling of resist materials and simulation of line edge profiles can play an important role in understanding and balancing complex trade-offs in optical lithography. There exist well understood and reliable techniques for calculation of the aerial image. We discuss here the models used to calculate the chemical modifications which occur in the resist and the models used to predict the profiles after development. We present the physical principles underlying these models and the assumptions inherent in them. In addition we examine the experimental techniques that are used to acquire modeling parameters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
