Abstract
Photolithography is one of the critical processes in IC manufacturing. Modeling of resist materials and simulation of line edge profiles can play an important role in understanding and balancing complex trade-offs in optical lithography. There exist well understood and reliable techniques for calculation of the aerial image. We discuss here the models used to calculate the chemical modifications which occur in the resist and the models used to predict the profiles after development. We present the physical principles underlying these models and the assumptions inherent in them. In addition we examine the experimental techniques that are used to acquire modeling parameters.
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