Abstract
A two-section model of a junction-gate field effect transistor with short channel length was derived. In this model, the current conducting channel is divided into a source and a drain section. The gradual channel approximation with a modification to include the hot electron effect is assumed applicable in the source section. The velocity saturation transport with excess carrier accumulation effect is formulated for the drain section. The normalized design curves and the characteristics of two sample devices are presented.
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