Analytical Model of Organic Field-Effect Transistor Based on Gradual Channel Approximation with Field-Dependent Mobility

Abstract

We developed an analytical model of an organic field-effect transistor (OFET) based on the gradual channel approximation with electric field (E)-dependent mobility µ=µ0 exp (β√E). The theoretical drain current–drain voltage curves are in good agreement with the measurements of pentacene OFETs, and the prefactor mobility µ0 at temperatures ranging from 233 to 303 K was evaluated. The electric-field- and temperature-dependent carrier transports are discussed independently in terms of µ0 on the basis of this model.