Abstract
GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-µm MESFET had a saturation drain current of 238 mA/mm after Si3N4passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited aPoutof 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximumPoutof 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited aP1dBof 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with aPoutof 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.
Highlights
Power transistors are key components of the power amplifiers in the transmitters of wireless communication systems [1 - 14]
GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated by means of direct double Si ion implantations for digital wireless communication applications
On the basis of the study results, more implantation energy and dosage conditions can be set as parameters for further study of the characteristics of GaAs power MESFETs with respect to various modern wireless communication applications
Summary
Chun-Yi Zheng[1], Wen-Jung Chiang[1], Yeong-Lin Lai*, 2, Edward Y. Chang[3], Shen-Li Chen[4] and K.
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