Abstract
An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (Vt), gate-source capacitance (Cgs) and saturation current (Id). The simulated results show that with the increase of H, the PAE of the device increases and then decreases when the value of NPLDC is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be NPLDC = 1 × 1015 cm−3 and H = 0.15 μm to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%.
Highlights
With the development of the semiconductor industry, SiC, diamond and GaN, the third-generation semiconductor materials, have become a research hotspot because of their high critical field strength, wide band gap and high carrier saturation rate [1,2,3,4,5,6]. 4H-SiC is used to manufacture power devices such as metal semiconductor field effect transistor (MESFET) due to its larger band gap and higher electron mobility compared to those of 3C-SiC and 6H-SiC [7]
The maximum power added efficiency (PAE) obtained from the partially low doped channel (PLDC)-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%
The PAE of the improved with an ultrahigh upper gate MESFET (IUU-MESFET) and the double recessed barrier layer (DRBL) AlGaN/GaN HEMT increased 18% and 48%, respectively
Summary
With the development of the semiconductor industry, SiC, diamond and GaN, the third-generation semiconductor materials, have become a research hotspot because of their high critical field strength, wide band gap and high carrier saturation rate [1,2,3,4,5,6]. 4H-SiC is used to manufacture power devices such as MESFETs due to its larger band gap and higher electron mobility compared to those of 3C-SiC and 6H-SiC [7]. Added Efficiency [10] and An Improved UU-MESFET with High Power Added Efficiency [11], a higher power added efficiency (PAE) was obtained by balancing the parameters of the devices. An improved 4H-SiC MESFET with a partially low doped channel (PLDC) is designed and simulated to improve the PAE of the 4H-SiC DR-MESFET [12] using ISE-TCAD and ADS. A partially low doped channel is used to balance the parameters of the device by adjusting the doping concentration and thickness. The key to this structure is to improve the AC/RF characteristics of the device and improve the PAE of the device. The main models were applied in ISE-TCAD tools simulation [14], including Mobility
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
