Abstract
An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.
Highlights
As a representative of the third generation semiconductor power radio frequency (RF) device, 4H-SiC metal semiconductor field effect transistors (MESFETs) have excellent DC and RF characteristics, such as a high output power density, large saturation current, high breakdown voltage, and large trans-conductance [1,2,3,4,5,6]
Many scholars have devoted themselves to studying the direct-current (DC) and RF characteristics of 4H-SiC MESFETs to meet the requirements of the development of electronic science and technology for 4H-SiC MESFETs
It is found that improving the trans-conductance, the saturation drain current, the breakdown voltage, and the forward conduction threshold voltage is beneficial to increasing the power added efficiency (PAE) of the UU-MESFET
Summary
As a representative of the third generation semiconductor power radio frequency (RF) device, 4H-SiC metal semiconductor field effect transistors (MESFETs) have excellent DC and RF characteristics, such as a high output power density, large saturation current, high breakdown voltage, and large trans-conductance [1,2,3,4,5,6]. The proposed IUU-MESFET structure achieves high PAE by modifying the ultrahigh upper gate height h of the UU-MESFET. It is found that improving the trans-conductance, the saturation drain current, the breakdown voltage, and the forward conduction threshold voltage is beneficial to increasing the PAE of the UU-MESFET.
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