Abstract
Based on the Multi-Recessed p-Buffer (MRB) Metal-Semiconductor Field-Effect Transistor (MESFET), this paper presents an Improved MRB 4H–SiC MESFET (IMRB MESFET) with high Power-Added Efficiency (PAE). The proposed structure has optimized recessed buffer layer from gate to drain. While maintaining excellent Radio Frequency performance, the maximum power density and PAE are greatly improved. The simulation results show that compared with MRB MESFET, the saturated drain current of IMRB MESFET is increased by 91.1%, the transconductance is increased by 15.5%, the Pmax is increased by 32.4%, and the PAE is increased by 40.29%. In summary, the IMRB MESFET is not only simple to manufacture, but also increases the energy conversion efficiency.
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