Abstract
In magnetron sputtering, argon ions deliver the sputtering effect on the target material and sputter out film atoms. An electromagnetic field can constrain the electrons to make a cycloid motion, which raises the probability of collision with argon gas and thereby produces more argon ions and increases the deposition rate. Sputtering targets in industrial production include rectangular planar sputtering targets and cylindrical sputtering targets. The magnetic field of sputtering target consists of the balanced type and the unbalanced type. The closed magnetic field can constrain the electrons to cause more collision ionization in the coating chamber, increasing the metal ionization ratio and deposition rate. The applications of intermediate-frequency power supply and twin targets, closed-loop flow control of the reactant gases, two-step method, and so on give full play to the advantages of magnetron sputtering for depositing large-area insulating films. Furthermore, hot cathode magnetron sputtering and high-power pulsed magnetron sputtering are usually employed to improve the film quality.
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