Abstract
In this chapter, we discuss the modeling of the current and capacitance for source/drain-substrate junction diode regions. As the size of the MOSFET shrinks, the control of gate on the channel gets reduced, and source/drain fields get more authority. As a result, the scaled-down conventional planar MOSFETs experience a significant amount of subsurface leakage current attributed to the source and the drain regions. To overcome this leakage, halo pockets are introduced below the source and the drain regions. The dose of the halo implants should increase with the decrease in the channel length to annihilate the impact of this leakage. However, as the channel length decreases, there is also a limitation on the halo dose, which cannot be increased beyond a certain limit. That is why these parasitics have become more important as the size of MOSFETs shrinks. Further, parasitics models related to geometry/layout are also discussed in this chapter.
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