Abstract
The epitaxial deposition of Si, often referred to as epi, is an essential step in the formation of many micro-electro-mechanical-systems (MEMS) structures. Epi is used as etch stops for forming bonded etch-back silicon on insulator (SOI) structures, to increase the Si thickness above the buried oxide on silicon implanted with oxygen (SIMOX) SOI structures and as a means for building a combination monocrystalline/polycrystalline structure referred to as epi–poly. Epi layers of up to 100μM, or even more, are used in MEMS structures, although most applications require only 2–20μM of epi. This brief treatise on epitaxy touches on the fundamentals of epitaxial deposition as well as some specific examples relevant to MEMS.
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