Abstract
Wafer bonding at the end of the wafer processing is a common method in MEMS fabrication. Here, a kind of wafer level assembly is performed by mounting protective caps over the mechanically sensitive MEMS structures, and sometimes 3D integration is realized. This wafer-bonding step seals functional cavities, stabilizes chips mechanically, or can apply other functional elements such as optical windows. Very often at least one of the wafers to be bonded has been processed by a complementary metal–oxide–semiconductor (CMOS) technology, either fully as an application-specific integrated circuit (ASIC) wafer, partially as a discrete MEMS sensor wafer, or additionally as an integrated MEMS sensor wafer. This chapter describes the special bonding process aspects and conditions required for bonding these types of highly sophisticated, processed CMOS wafers.
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