Abstract
This chapter describes the special bonding processes and conditions required for bonding of highly sophisticated, processed CMOS wafers. Wafer bonding at the end of the wafer processing is a common method in MEMS fabrication, where a kind of wafer level assembly is performed by mounting protective caps over the mechanically sensitive MEMS structures. The special aspects, requirements, and limitations of the bonding, that is, of the mechanical joining of CMOS processed wafers, are described here in details. CMOS processed wafers normally contain electrical elements such as transistors, resistors, and capacitors made by implantations, insulation, and metal layers. Different types of bonding such as anodic bonding, wafer glass frit bonding, and adhesive bonding are also explained. The bonding of fully processed CMOS wafers is quite a challenge because many requirements must be met in order to avoid influencing the electrical structures and circuitry. However, it has been shown for different bonding processes that it is possible to achieve good results if the intricate process is well known. It should be examined in detail how the process can be efficiently carried out to prevent any influence on the CMOS wafer parameters.
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