Abstract
There has been considerable focus dedicated in recent years to ferroelectric materials for nonvolatile memory applications. With ferroelectric memories (FeRAMs) rather than conventional memories, high-speed writing, low dissipation, power, and high endurance can be achieved for the first time. Several attempts are made to make ferroelectric nonvolatile memories in the 1950s and 1960s. Unfortunately, these efforts were not successful because the ferroelectric material used in these memories experienced serious problems, including fatigue, imprint, and degradation because of the integration process. Due to these material issues, the first commercial FeRAMs were not available until almost 30-year later. In this chapter, some of the major breakthroughs in FeRAM technology are discussed highlighting, material issues, the integration process, different circuit designs, and some very recent achievements in the industry. Thus, with some of the improved processing techniques described in the foregoing, it is believed that high-density FeRAMs will soon be available as they are clearly within the scope of current technology.
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