Abstract
For Si crystals, basic characterization, electrical properties and measurement methods of electrical and optical properties are basically explained mainly about the properties of Si crystals with defects, the recombination centers of impurities, grain boundaries and dislocations, the diffusion length and minority carrier lifetime. For the measurement methods of minority carrier lifetime, μ-PCD and QSSPC methods are shown. Processes to control electrical and optical properties of Si crystals are explained about gettering, hydrogenation, low-temperature annealing for Fe impurities, Tabula Rasa process and thermal donors. Especially, the recombination activities of metal impurities, several grain boundaries with different misorientations and CSL indexes and dislocations with impurity decoration are shown using different methods such as EBIC contrast and PL spectroscopy. The performance of p- and n-type Si solar cells are shown on view points of doping and BO complexes.
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