Chapter 12 - Design and Fabrication of GaN High Power Rectifiers

Abstract

The purpose of this chapter is to study design and fabrication of gallium nitride (GaN) high power rectifiers. GaN power Schottky diodes have many advantages over more conventional Si rectifiers, achieving a maximum electric field breakdown strength over 10 times larger and on-state resistance approximately 400 times lower at a given voltage. These characteristics have made GaN devices attractive for hybrid electric vehicles and power conditioning in large industrial motors. In particular, Schottky rectifiers are attractive because of their fast switching speed that is important for improving the efficiency of inductive motor controllers and power supplies. Both GaN and SiC power Schottky diodes have demonstrated shorter turn-on delays than comparable Si devices. There is an interest in the development of ultra high power inverter modules based on GaN and other wide-bandgap semiconductors. These would have application in pulsed power for avionics and electric ships, in solid-state drivers for heavy electric motors and in advanced power management and control electronics.