Abstract
This chapter is designed to discuss the activities of the AIXTRON group of companies in the metal organic vapor phase epitaxy (MOVPE) of III-nitrides. AIXTRON is a pure supplier of equipment for the semiconductor market. The MOVPE of III-nitrides became important in the early 1990s when nitride-based light-emitting diodes (LEDs) were demonstrated. In the mid-1990s, a few groups were able to grow LED structures on these small systems and the first interest in larger scale reactors for the production of blue LEDs developed. At that time, production processes for growing the GaAlInP-based epilayers used for LEDs operating in the yellow to red spectral region were established on multi-wafer systems. These systems were not able to grow gallium nitride (GaN)-based material because the maximum operation temperature was limited to 900°C. The current market requirements for production MOVPE machines are changed from those of the late 1990s. Today, the market expects a system with high throughput and low cost of ownership (COO) combined with high performance regarding the uniformity of layer properties such as thickness, wavelength, electro-luminescence intensity, and doping level. Computational modeling of nitride MOVPE processes and reactors is essential in the development of metal organic chemical vapor deposition (MOCVD) equipment.
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