Abstract
This chapter reviews various techniques to form nitride quantum dots (QDs) and discusses the current status of nitride QD research. In particular, emphasis is put on three major growth techniques such as growth of strain-induced SK QDs, growth by anti-surfactant, and growth by selective epitaxy. This chapter reviews effects of various parameters in each growth techniques and changes in physical properties. For the last few decades, low-dimensional quantum structures, such as quantum wells (QWs), quantum wires (QWRs), and QDs have been attracting lots of interest because of their potential advantages compared with bulk materials. Among these, QDs are the most promising because of their unique electronic states, such as 5-function-like density of states, three-dimensional (3D) carrier confinement. Because of their unique properties, the semiconductor laser with a QD active layer is expected to have ultra-low threshold current, reduced temperature sensitivity, narrower spectral line width, and high-modulation bandwidth. Furthermore, the semiconductor photodetector with QDs are also expected to have the sensitivity for the normally incident light, enhanced photoexcited carrier lifetime, reduced dark current, and higher electric gain.
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