Abstract
Gallium nitride (GaN) power transistors are gaining rapid acceptance by the power electronics industry as the next generation wide bandgap (WBG) power semiconductor technology. Early direct drop-in replacement attempts of the silicon based power MOSFETs with GaN power devices either produce no significant performance improvement or even degradation in some situations. This is mainly due to the fact that the GaN power devices were not driven properly to fully exploit their true performance. In this paper, different gate driving techniques for both depletion and enhancement mode GaN power transistors are examined. In addition, the recent trends on integrated GaN pre-driver and GaN power ICs is also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
