Abstract
Publisher Summary This chapter begins with a discussion on transferred-electron diodes, or Gunn diodes. Gunn diodes are not true diodes because a “diode” is usually defined as a device having an asymmetrical current-voltage characteristic. As Gunn diodes possess a current-voltage characteristic similar to that of resistors, the terms “transferred-electron device” or “Gunn device” are more formerly used. The chapter reviews the Gunn device mechanism, fabrication technology, and applications. The chapter also provides an overview of negative differential mobility, device modeling, Gunn device design, and its fabrication. It explains the construction of various forms of Gunn oscillators and circuits. Gunn amplifiers and noise characteristics are also explored in the chapter. In the concluding part, the chapter describes the power-combining techniques of Gunn devices. Gunn diode oscillators have proved to be a reliable microwave and millimeter-wave solid-state frequency source. The GaAs Gunn diodes are used extensively in microwave and millimeter-wave systems from 3 to 120 GHz.
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